Ircon’s Application note AN110 of the same title as this story
Santa Cruz CA, USA — The use of Thermal Infrared Radiation Thermometry (Infrared or IR Thermometry) for substrate temperature measurement during molecular beam epitaxy (MBE), a semiconductor manufacturing process, is discussed in this free applications note on the Ircon website.
The fundamental relationships of radiation heat transfer is treated in respect to the optical properties of semiconductor grade silicon (Si) and gallium arsenide (GaAs) wafers.
Both materials are semitransparent in various portions of the near and mid-IR and their transmission and absorption properties spectrally with their temperature, making this a very tricky application of IR Thermometers.
The useful ranges of temperature measurement are evaluated for two MODLINE 3 radiation thermometer series (Ircon Models that operate in the near infrared (Near IR), one a “wide” band from 0.8 to 1.05 micron, the other in a “narrow” band centered on 0.9 microns.
To access the rest of the story click on the PDF download link: www.ircon.com/web/pdf/an110.pd
About IRCON
Since 1962 IRCON has been offering a wide range of Infrared or Thermal Infrared Radiation Thermometers and Thermal Imagers product range and experience that are unmatched in the industry. IRCON products perform with accuracy and repeatability in the harshest and most volatile conditions requiring precise temperature measurement and control. In 2007, Ircon joined the Raytek Automation business. The newly expanded line of IR sensors will provide more complete temperature measurement solutions for an even wider range of industrial, commercial and scientific problems.
Ircon
1201 Shaffer Road
Santa Cruz, California 95060
USA
Tel: +1 831 458 3998
Fax: +1 831 425 4561
e-Mail: info [at] ircon.com
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