True wafer temperature measurements in Molecular Beam Epitaxy, or MBE, is an applications story (Application Note 18) from LayTec GmbH in Germany about the benefits of this technology in semiconductor processing, especially for GaAs (Gallium Arsenide) and InP (Indium Phosphide), two materials that are opaque at the wavelength region of interest in the Near Infrared (NIR), 950 nm.
The lead in to the applications note reads as follows:
“LayTec’s in-situ sensors are state-of-the-art in-situ growth monitors for basic growth studies, process development, process transfer and for enhancing run-to-run reproducibility in production environment. These sensors are offered for a variety of growth systems in MBE, MOVCD and other growth techniques. All sensors are available with LayTec ?s True Temperature measurement mode based on emissivity corrected pyrometry: EpiTT, EpiR TT and EpiRAS TT“.
You can download a copy of the entire note: “True wafer temperature measurements in MBE “- CLICK HERE – PDF – 122 Kb
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