Emissivity
Ircon’s Application note AN110 of the same title as this story Santa Cruz CA, USA — The use of Thermal Infrared Radiation Thermometry (Infrared or IR Thermometry) for substrate temperature measurement during molecular beam epitaxy (MBE), a semiconductor manufacturing process, is discussed in this free applications note on the Ircon website. The fundamental relationships of [...]
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Emissivity
True wafer temperature measurements in Molecular Beam Epitaxy, or MBE, is an applications story (Application Note 18) from LayTec GmbH in Germany about the benefits of this technology in semiconductor processing, especially for GaAs (Gallium Arsenide) and InP (Indium Phosphide), two materials that are opaque at the wavelength region of interest in the Near Infrared [...]
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